发明名称 |
Method for fabricating semiconductor device with metal line |
摘要 |
A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.
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申请公布号 |
US7648909(B2) |
申请公布日期 |
2010.01.19 |
申请号 |
US20050321533 |
申请日期 |
2005.12.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LEE HAE-JUNG;CHO SANG-HOON;KIM SUK-KI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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