发明名称 Method of pattern formation in semiconductor fabrication
摘要 Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.
申请公布号 US7648918(B2) 申请公布日期 2010.01.19
申请号 US20070841485 申请日期 2007.08.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIU GEORGE;CHEN KUEI SHUN;CHANG VENCENT;CHANG SHANG-WEN
分类号 H01L21/467 主分类号 H01L21/467
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