| 摘要 |
<p>PURPOSE: A contact hole forming method using a double patterning process is provided to improve the margin of overlay and a lower electrode by controlling the size of a contact hole. CONSTITUTION: A conductive layer pattern is formed on a semiconductor substrate(300). An inter-layer insulating film is formed on the conductive layer pattern. A first resist layer pattern with a first opening formed on the inter-layer insulating film is formed. A resist is extended to the domain exposed by the first resist layer pattern, so the second opening which had relatively narrow width is formed. A second resist layer pattern with a third opening is formed on an inter-layer insulating film with a preliminary contact hole. A contact hole(390) including an upper contact hole is formed.</p> |
