| 摘要 |
PURPOSE: A manufacturing method of an image sensor is provided to lower operating voltage and minimize the resistance of a gate electrode using single-crystal silicon instead of poly-silicon. CONSTITUTION: An ion implantation layer is formed on the middle part of a first substrate by injecting impurity ion. The first substrate is welded on a second substrate(200) by turning over the first substrate. A first substrate part which is lower than the ion implantation layer is separated based on the ion implantation layer as a boundary. The first substrate which is partially removed is patterned and a gate electrode(130) is formed.
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