发明名称 LIGHT EMITTING DIODE IN WHICH THE PHOTONIC CRYSTAL STRUCTURE IS FORMED AND THE METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A light emitting diode with a photonic crystal structure and a method for manufacturing the same are provided to enhance light extracting efficiency by removing the factors lowering the enhance light extracting efficiency produced when the light is reflected off the semiconductor layer. CONSTITUTION: A light emitting diode comprises a first semiconductor layer(220) which is formed on a substrate, an active layer(230) which is formed on the first semiconductor layer to generate light, and a second semiconductor layer(240) which is formed on the second semiconductor layer. In the peripheral region of the second semiconductor layer, a photonic crystal structure is formed to reflect the light, which enters from the active layer and propagates toward the peripheral region, to the central region.
申请公布号 KR20100005373(A) 申请公布日期 2010.01.15
申请号 KR20080065378 申请日期 2008.07.07
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 KIM, TAE GEUN;LEE, BYOUNG GYU;ZHONG YUAN
分类号 H01L33/10 主分类号 H01L33/10
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