SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device including a contact structure and a manufacturing method thereof are provided to reduce the boundary resistance between the contact structure and the second impurity region by making the contact structure electrically contact with the second impurity region. CONSTITUTION: A semiconductor device comprises a first active structure(124), a first gate insulating layer(136), a first gate electrode(138), a first impurity region(130), a second impurity region(152), and a contact structure(156). The first active structure comprises a first lower pattern formed in a first area of a substrate and a first upper pattern formed on the first lower pattern. The first gate insulating layer is formed on the sidewall of the first upper pattern. The first gate electrode is formed on the first gate insulating layer. The first impurity region is formed in the first lower pattern. The second impurity region is formed in the first upper pattern. The contact structure covers the upper side and the upper sidewall including the second impurity region of the first upper pattern.