| 摘要 |
<p>PURPOSE: A gate patterning method for a semiconductor device is provided to reduce the number of photolithography processes, conventionally three times, to two times. CONSTITUTION: A gate patterning method for a semiconductor device comprises the steps of: forming an etching target film including a gate conductive layer on a semiconductor substrate, forming a first hard mask layer on the etching target film, patterning a first hard mask layer(160) using a gate mask with a first pad on one end, forming spacers on the side of the patterned first hard mask layer, forming a second hard mask layer on the etching target film exposed between the spacers, etching the first and the second hard mask layer using a mask covering a cell region and a second pad opposite to the first pad, removing the spacers, and patterning the etching target film using the first and the second hard mask layer.</p> |
