发明名称 |
INTEGRIERTE WASSERSTOFFTEMPERUNG UND GATE-OXIDATION FÜR VERBESSERE GATE-OXIDINTEGRITÄT |
摘要 |
A method of forming a trench gate field effect transistor includes the following processing steps. Trenches are formed in a semiconductor substrate. The semiconductor substrate is annealed in an ambient including hydrogen gas. A dielectric layer lining at least the sidewalls of the trenches is formed. During the time between annealing and forming the dielectric layer, the semiconductor substrate is maintained in an inert environment to prevent formation of native oxide along sidewalls of the trenches prior to forming the dielectric layer. |
申请公布号 |
AT507036(A2) |
申请公布日期 |
2010.01.15 |
申请号 |
AT20080009020 |
申请日期 |
2008.01.30 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
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分类号 |
H01L21/28;H01L21/324;H01L21/336;H01L29/423;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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