| 摘要 |
<p>PURPOSE: A magnetic RAM and a manufacturing method thereof are provided to increase a size of cell arrangement by reducing the resistance difference due to a source line connected to each cell. CONSTITUTION: A magnetic tunnel junction(MTJ) is formed between source lines(SL) and bit lines. The magnetic tunnel junction changes the magnetization direction according to the direction of the current flowing between source lines and data lines. Metal lines(ML) are extended to the same direction as the source lines and are formed in the different layer from the source lines. Metal line contacts(MLC) electrically connect the corresponding source line and the metal line at a plurality of points.</p> |
