| 摘要 |
The invention provides a nonvolatile semiconductor memory device comprising a plurality of memory strings each including a plurality of electrically programmable memory cells connected in series. The memory string includes a semiconductor pillar, an insulator formed around the circumference of the semiconductor pillar, and first through nth electrodes to be turned into gate electrodes (n denotes a natural number equal to 2 or more) formed around the circumference of the insulator. It also includes interlayer electrodes formed in regions between the first through nth electrodes around the circumference of the insulator.
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