发明名称 |
METHOD FOR DOPING SEMICONDUCTOR STRUCTURES AND THE SEMICONDUCTOR DEVICE THEREOF |
摘要 |
A method for introducing species into a strained semiconductor layer comprising: providing a substrate comprising a first region comprising an exposed strained semiconductor layer, loading the substrate in a reaction chamber, then forming a conformal first species containing-layer by vapor phase deposition (VPD) at least on the exposed strained semiconductor layer, and thereafter performing a thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer and activating at least part of the diffused first species in the strained semiconductor layer. |
申请公布号 |
WO2010003928(A2) |
申请公布日期 |
2010.01.14 |
申请号 |
WO2009EP58529 |
申请日期 |
2009.07.06 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC);LOO, ROGER;LEYS, FREDERIK;CAYMAX, MATTY |
发明人 |
LOO, ROGER;LEYS, FREDERIK;CAYMAX, MATTY |
分类号 |
H01L21/225;H01L29/10 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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