| 摘要 |
The manufacturing method for a cell of a memory device entails the applying and structuring of an active material (2) on a backing substrate (1) for the forming of a rough component for the cell (14), and the introducing of impurities into the rough component in such a way that a concentration of the impurities in an edge region (15) is greater than in a core region (16) of the rough component in order to form from the rough component a cell which has a reduced specific electrical conductivity in the edge region. An independent claim is included for a memory device with a cell manufactured by the aforesaid method. |
