发明名称 METHOD OF CREATING MASK PATTERN DATA AND METHOD FOR MANUFACTURING MASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of creating a mask pattern facilitating formation of a fine pattern with high accuracy in a lithographic process using a reflective optical system. <P>SOLUTION: The method of creating the mask pattern for a device pattern to be formed in a mask 1 for reflective exposure includes a step of generating the data of a mask pattern 6 based on a position correction amount table for correcting a misalignment amount of a transfer position upon transferring the mask pattern 6 onto an exposure object 7 caused associating with at least either a pattern dimension or a pattern pitch of the mask pattern 6. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010008921(A) 申请公布日期 2010.01.14
申请号 JP20080170963 申请日期 2008.06.30
申请人 TOSHIBA CORP 发明人 WATANABE YUMI;SUZUKI MASARU;SATO TAKASHI
分类号 G03F1/24;G03F1/36;G03F1/42;G03F1/44;G03F1/68;G03F1/70;H01L21/027 主分类号 G03F1/24
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