| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microcomputer for achieving improvement in security. <P>SOLUTION: A nonvolatile memory NVMEM included in the microcomputer sets a first memory cell area ARY1 of which the data storage life-time becomes 10 years or longer in the memory array NVARY and a second memory cell area ARY2 of which the data storage life-time becomes 1-365 days. To achieve the difference in the data storage life-time, when erasing or writing data for the area ARY1, the memory NVMEM uses an easing or writing voltage based on a reference voltage generation circuit VRFGEN1, and when erasing or writing the data for the area ARY2, the memory NVMEM uses an easing or writing voltage having an absolute value smaller than that of the area ARY1 on the basis of a reference voltage generation circuit VRFGEN2. <P>COPYRIGHT: (C)2010,JPO&INPIT |
