| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device improving throughput in processing by stably adsorbing a wafer. Ž<P>SOLUTION: The plasma treatment device includes a treatment chamber where plasma in a vacuum container is formed, a sample stage which is arranged therein to hold a wafer on its upper surface by electrostatic adsorption, a first heater which is arranged on the upper surface of the sample stage to heat the wafer, a second heater arranged and surrounded by the outer peripheral side of the upper surface in a lower sample stage under the first heater in the sample stage, and an adjuster which adjusts the operation of the second heater so that the temperature of the lower part of the sample stage is higher at the outer peripheral side than at the central side by the second heater. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
