| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a capacity element reduced in a variation of a characteristic caused by the application of a voltage, in a semiconductor device mixedly mounted with a transistor having a metal gate. Ž<P>SOLUTION: This device includes a semiconductor region 12 and an insulating region 13 formed in a semiconductor substrate 11, a transistor device 20 formed in the semiconductor region 12, and the capacity element 30 formed on the insulating region 13. The transistor device 20 includes a gate electrode 22 of a two-layer structure of a first gate electrode 23 and a second gate electrode 24 formed on the semiconductor region 12 through a gate insulating film 21, and source-drain regions 27, 28 formed in the semiconductor region 12 of both sides of the gate electrode 22. The capacity element 30 includes a first capacity electrode 31, a capacity insulating film 32 and a second capacity electrode 33 laminated on the insulating region 13. The first capacity electrode 31 and the first gate electrode 23, and the second capacity electrode 33 and the second gate electrode 24 are formed of the same materials. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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