发明名称 |
FORMATION OF SOI BY OXIDATION OF SILICON WITH ENGINEERED POROSITY GRADIENT |
摘要 |
A method is provided for making a silicon-on-insulator substrate. Such method can include epitaxially growing a highly p-type doped silicon-containing layer onto a major surface of an underlying semiconductor region of a substrate. Subsequently, a non-highly p-type doped silicon-containing layer may be epitaxially grown onto a major surface of the p-type highly-doped epitaxial layer to cover the highly p-type doped epitaxial layer. The overlying non-highly p-type doped epitaxial layer can have a dopant concentration substantially lower than the dopant concentration of the highly p-type doped epitaxial layer. The substrate can then be processed to form a buried oxide layer selectively by oxidizing at least portions of the highly p-type doped epitaxial layer covered by the non-highly p-type doped epitaxial layer, the buried oxide layer separating the overlying monocrystalline semiconductor layer from the underlying semiconductor region. Such processing can be performed while simultaneously annealing the non-highly p-type doped epitaxial layer.
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申请公布号 |
US2010006985(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20080170459 |
申请日期 |
2008.07.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DESOUZA JOEL P.;FOGEL KEITH E.;REZNICEK ALEXANDER;SADANA DEVENDRA |
分类号 |
H01L29/12;H01L21/20 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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