| 摘要 |
A reactor for carrying out an etching method for a stack of masked wafers, using an etching gas, preferably chlorotrifluoride (ClF3), wherein the reactor includes a device for carrying out a plasma process. An etching method for masked wafers, using an etching gas, preferably chlorotrifluoride (ClF3), the wafer being pretreated in a plasma process before an etching process, wherein the wafer pretreatment and the etching process for a stack of wafers take place in a reactor chamber.
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