发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p>A power semiconductor module (1) includes a first MOS transistor (16) connected to a positive-side power supply terminal through a first conductive pattern (11); a first reflux diode (17) connected to the positive-side power supply terminal through a second conductive pattern (12); a second MOS transistor (18) connected to a negative-side power supply terminal through a third conductive pattern (13); and a second reflux diode (19) connected to the negative-side power supply terminal through a fourth conductive pattern (14). The semiconductor elements (16-19) are connected to output terminals on a load side through a common fifth conductive pattern (15). At this time, the semiconductor elements (16, 17) connected to the positive-side power supply terminal and the semiconductor elements (18, 19) connected to the negative-side power supply terminal are alternately arranged in a substantially straight line state.</p>
申请公布号 WO2010004802(A1) 申请公布日期 2010.01.14
申请号 WO2009JP58066 申请日期 2009.04.23
申请人 MITSUBISHI ELECTRIC CORPORATION;NAKATA, SHUHEI 发明人 NAKATA, SHUHEI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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