| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device applicable, for example, to a NAND flash memory that can stabilize voltage in a peripheral circuit by reducing leakage current while a high voltage transistor is off. <P>SOLUTION: In a peripheral circuit area PR, a semiconductor layer 14 of SiC or GaN having a wider bandgap than silicon is formed on a part of a silicon substrate 11. Memory cells 13 are formed in the silicon substrate 11. The transistor 15 constituting the peripheral circuit is formed in the semiconductor layer 14. The bandgap of the semiconductor layer 14 is wider than that of silicon, so that no tunnel electrons are developed while the transistor 15 is in an off-state, thereby preventing the occurrence of GIDL. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
