摘要 |
<p>In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DEBROSSE, JOHN, K.;GALLAGHER, WILLIAM, J.;LU, YU |
发明人 |
DEBROSSE, JOHN, K.;GALLAGHER, WILLIAM, J.;LU, YU |