| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating crystal oscillator element, which can improve productivity per one wafer. <P>SOLUTION: When forming, by means of etching on the front surface 10 and back surface 30 of a wafer, arrays of a first depression 21 whose cross-sectional shape takes an inverted trapezoid and arrays of a second depression 41 which are each arrayed alternately in relation to the first depression 21, in a sectional array 20a on the front surface and a sectional array 40a on the back surface, each depression is formed so that first sidewalls 23, 43, each having the same slope angle as those of the first depression 21 and second depression 42 or those of second sidewalls 24, 44, overlap one another in the width direction of the wafer W. Thus, the first sidewalls 23, 42 or the second sidewalls 24, 44, which cannot be formed with a crystal 51 due to the slopes of the sidewalls are allowed to overlap one another on the front surface 10 and the back surface 30 of the wafer, thus permitting the number of first and second allocatable depressions 21, 41 to be increased. <P>COPYRIGHT: (C)2010,JPO&INPIT |
