| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent destruction caused by overshoot in a case where a power transistor is turned off when short-circuiting is detected, while suppressing to a minimum increase in manufacture costs of a semiconductor chip. <P>SOLUTION: A series circuit of a high-side pull-down NMOS transistor 601 and a resistor R1 is connected between a gate and a source of a high-side NMOS power transistor 401, and a gate of the high-side pull-down NMOS transistor 601 is connected to a gate of a PMOS transistor 305 of a high-side pre-driver 300H. A series circuit of a low-side pull-down NMOS transistor 602 and a resistor R2 is connected between a gate and a source of a low-side NMOS power transistor 402, and a gate of the low-side pull-down NMOS transistor 602 is connected to a gate of a PMOS transistor 315 of a low-side pre-driver 300L. <P>COPYRIGHT: (C)2010,JPO&INPIT |
