| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ZnO varistor having a higher varistor voltage, a higher non-linear index, and an excellent anti-charging deterioration characteristic with least addition of antimony Sb. <P>SOLUTION: The antimony-added zinc oxide varistor is manufactured by wet-mixing of silicon dioxide of 100 to 1,500 ppm in the average grain size of 5 to 10 nm added to zinc oxide of 98.8 mol%, bismuth oxide of 0.5 mol%, manganese oxide of 0.5 mol%, Co3O4 of 0.2 mol%, and water-soluble salt of antimony of 200 to 2,400 ppm, tentatively baking a mixture obtained, then milling the mixture, pressure-molding the milled mixture, and finally baking the molded mixture obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
