| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its production process, in which increase in chip size and increase in production cost can be suppressed, regarding semiconductor device including a capacitor such as a memory capacitor and a smoothing capacitor having a large capacity. <P>SOLUTION: The semiconductor device includes: a memory capacitor formed in an upper portion over a semiconductor substrate 1 and comprising a first lower electrode 12A, a first capacitance insulating film 13A and a first upper electrode 14A; a logic circuit transistor 4 formed on a logic circuit region in the semiconductor substrate; and a smoothing capacitor formed in an upper portion over the logic circuit transistor 4 and comprising a second lower electrode 12B, a second capacitance insulating film 13B and a second upper electrode 14B. The second capacitance insulating film 13B is composed of a material having the same composition of that of the first capacitance insulating film 13A and has a film thickness larger than that of the first capacitance insulating film 13A. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
