发明名称 |
METHOD FOR FORMING THIN FILM OF OXIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film of an oxide which retains the orientation of a metal substrate. SOLUTION: The method includes the step of vapor-depositing a material made of a metal or a metal oxide on a heated, orientated metal substrate in an atmosphere containing oxygen, with an electron-beam evaporation technique. The above vapor-deposition step is conducted by setting a partial pressure of water vapor in the atmosphere at 1×10<SP>-4</SP>Pa or lower, and by controlling at least one of a partial pressure of oxygen in the atmosphere and a film-forming temperature. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010007164(A) |
申请公布日期 |
2010.01.14 |
申请号 |
JP20080170946 |
申请日期 |
2008.06.30 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE;INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER |
发明人 |
NAKASAKI RYUSUKE;KASAHARA MASAYASU;MATSUI MASAKAZU |
分类号 |
C23C14/08;H01B12/06;H01B13/00 |
主分类号 |
C23C14/08 |
代理机构 |
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