发明名称 METHOD FOR FORMING THIN FILM OF OXIDE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a thin film of an oxide which retains the orientation of a metal substrate. SOLUTION: The method includes the step of vapor-depositing a material made of a metal or a metal oxide on a heated, orientated metal substrate in an atmosphere containing oxygen, with an electron-beam evaporation technique. The above vapor-deposition step is conducted by setting a partial pressure of water vapor in the atmosphere at 1&times;10<SP>-4</SP>Pa or lower, and by controlling at least one of a partial pressure of oxygen in the atmosphere and a film-forming temperature. COPYRIGHT: (C)2010,JPO&amp;INPIT
申请公布号 JP2010007164(A) 申请公布日期 2010.01.14
申请号 JP20080170946 申请日期 2008.06.30
申请人 FURUKAWA ELECTRIC CO LTD:THE;INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER 发明人 NAKASAKI RYUSUKE;KASAHARA MASAYASU;MATSUI MASAKAZU
分类号 C23C14/08;H01B12/06;H01B13/00 主分类号 C23C14/08
代理机构 代理人
主权项
地址