摘要 |
<P>PROBLEM TO BE SOLVED: To increase distortion amount occurring in a channel region of MOSFET, for improving element performance based on distortion. Ž<P>SOLUTION: The semiconductor device includes: a semiconductor substrate 1; a first insulating film 2a provided to extend in the first direction on the upper surface of the semiconductor substrate 1; a first distortion-inducing layer 3 which is provided to sandwich the first insulating film 2a from a second direction vertical to the first direction, for applying a stress, in the second direction, to the first insulating film 2a, thereby inducing a distortion in the first direction; a first semiconductor layer 5a which is provided on the first insulating film 2a and includes a channel region 4 receiving a stress from the first insulating film 2a to have a distortion in the first direction; a source region 9 and a drain region 10 provided from the first direction to sandwich the channel region; a gate insulating film 6 provided on the upper surface and the side surface to face the second direction of the first semiconductor layer 5a; and a gate electrode 7 provided to face the channel region 4 through the gate insulating film 6. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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