发明名称 SILICON SINGLE CRYSTAL PRODUCTION APPARATUS AND SILICON SINGLE CRYSTAL PRODUCTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon single crystal production apparatus and a silicon single crystal production method which each reduces the collision of a silicon solid raw material against a crucible and suppresses the adhesion of a silicon melt to a raw material filling container. Ž<P>SOLUTION: A crucible 4 which melts a silicon solid raw material, a raw material filling container 18 being a feed apparatus which feeds the solid raw material and containing a raw material feed part 19 which feeds the solid raw material into the crucible 4, and a raw material feed part cover which covers the raw material feed part 19 and tapers toward an opening formed on the crucible side 4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010006657(A) 申请公布日期 2010.01.14
申请号 JP20080169109 申请日期 2008.06.27
申请人 KYOCERA CORP 发明人 MURASE YU
分类号 C30B29/06;C30B15/02 主分类号 C30B29/06
代理机构 代理人
主权项
地址