Joined wafer, fabrication method thereof, and fabrication method of semiconductor devices

摘要

A method of fabricating a joined wafer has an exposure process which comprises a device formed-area exposure process of exposing by a stepper such that parts of the photosensitive adhesive layer formed over a surface of the transparent wafer or the device formed wafer are removed, the parts corresponding to the device formed areas when the transparent wafer and the device formed wafer are stuck together; and a wafer periphery exposure process of exposing such that a portion of the photosensitive adhesive layer over the periphery of the transparent wafer is left.