发明名称 SEMICONDUCTOR DEVICE INCLUDING DRIVING TRANSISTORS
摘要 A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individual source/drains being independent from each other. The common source/drain and the individual source/drains are disposed in the driving active region.
申请公布号 US2010008152(A1) 申请公布日期 2010.01.14
申请号 US20090481916 申请日期 2009.06.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SE-HOON;LEE CHOONG-HO;CHOE JEONG-DONG;KIM TAE-YONG;KIM WOO-JUNG;JANG DONG-HOON;YOON YOUNG-BAE;KIM KI-HYUN;YU MIN-TAI
分类号 G11C11/4096;G11C5/06 主分类号 G11C11/4096
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