发明名称 |
Memory device and method of programming thereof |
摘要 |
The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses.
|
申请公布号 |
US2010008146(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20090453594 |
申请日期 |
2009.05.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON HONG RAK;KIM JAE HONG;KONG JUN JIN |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|