发明名称 |
HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH SHORTENED SOURCE AND DRAIN |
摘要 |
A high-voltage metal-oxide-semiconductor (HV MOS) transistor is provided to form the decoder in a source driver of a display apparatus for substantially saving the layout area. The HV MOS transistor includes two doped regions with a first conductivity type disposed in a semiconductor substrate, and a gate region having a second conductivity type opposite to the first conductivity type on the semiconductor substrate and between the doped regions. Accordingly, the layout area could be substantially reduced.
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申请公布号 |
US2010007537(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20090551327 |
申请日期 |
2009.08.31 |
申请人 |
BU LIN-KAI;CHEN YING-LIEH |
发明人 |
BU LIN-KAI;CHEN YING-LIEH |
分类号 |
H03M1/66;H03K17/16 |
主分类号 |
H03M1/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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