发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem that bonding strength is lower in wire bonding to a place where a probe trace is present than in bonding to a place where there is no probe trace although the wire bonding is carried out in a state wherein there is a probe trace on a pad since a process of confirming the probe trace on the pad is necessary in probe inspection and the wire bonding to a bonding pad is carried out after the probe inspection is performed in a wafer state. <P>SOLUTION: A semiconductor integrated circuit device is configured as follows. Actual bonding pads are arranged along a side of a semiconductor chip. A dummy pad whose area is smaller than that of the actual bonding pad is arranged in such a way that a center of the dummy pad approximately locates on the regression line of the probe traces shifting to one of sides, out of all probe traces on the respective actual bonding pads of a linearly arranged actual bonding pad row, the all probe traces being formed alternately shifting perpendicularly with respect to the center line of the arranged actual pads. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010197(A) 申请公布日期 2010.01.14
申请号 JP20080164557 申请日期 2008.06.24
申请人 RENESAS TECHNOLOGY CORP 发明人 YASUMURA BUNJI;KURODA YUKIE;DEGUCHI YOSHINOBU
分类号 H01L21/66;H01L21/60;H01L21/822;H01L27/04 主分类号 H01L21/66
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