发明名称 DOUBLE EXPOSURE PATTERNING WITH CARBONACEOUS HARDMASK
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of patterning a member in a substrate layer by exposing a photoresist layer more than twice. <P>SOLUTION: A carbonaceous mask layer is deposited (210), and thereafter a photoresist layer and an intermediate layer are deposited on the carbonaceous layer in an operation (215). Reticles are aligned on the substrate layer (225), a photoresist is subjected to a first exposure (230), and a first pair of photoresist lines are formed. The alignment between the substrate layer and the reticles are offset by a predetermined amount (235), the photoresist is subjected to a second exposure (240), and at least one of the photoresist lines printed by the first exposure is branched. The secondly-exposed photoresist is then developed (245). By the double pattern formed on the photoresist layer, the carbonaceous mask layer and another optional non-photosensitive intermediate layer are patterned (250). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010676(A) 申请公布日期 2010.01.14
申请号 JP20090143126 申请日期 2009.06.16
申请人 APPLIED MATERIALS INC 发明人 HUI W CHEN;CHANG CHORNG-PING;CHEN YONGMEI;DAI HUIXIONG;YU JIAHUA;YANG SUSIE X;XU XUMOU;BENCHER CHRISTOPHER D;HUNG RAYMOND HOIMAN;DUANE MICHAEL P;NGAI CHRISTOPHER SIU WING;XU ZHENG;MACWILLIAMS KENNETH
分类号 H01L21/027;G03F7/20;G03F7/40;H01L21/3065 主分类号 H01L21/027
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