| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce stress in a substrate, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes: a substrate having an element region where a semiconductor element is formed; a via hole formed in a portion of the substrate adjacent to the element region; a conducting portion provided in the via hole via an insulating layer; and a buffer layer provided between the substrate and the insulating layer, wherein the buffer layer is made of a material in which a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer. COPYRIGHT: (C)2010,JPO&INPIT |
