| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce wiring resistance by devising a method of contacting a source/drain region. Ž<P>SOLUTION: The semiconductor device has a silicon oxide film on a substrate; a semiconductor layer having a source region and a drain region on the silicon oxide film, first silicide formed on the source region, second silicide formed on the drain region, and a channel formation region; a gate insulating film; a gate electrode having a polycrystalline silicon film and third silicide; a sidewall provided on a side surface of the gate electrode; first metal wiring formed in contact with the first silicide; and second metal wiring formed in contact with the second silicide, the first metal wiring and second metal wiring being formed by etching the same metal film and the first silicide to the third silicide being formed using the metal used for the metal film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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