| 摘要 |
It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate. It is provided a ZnO based semiconductor, a fabrication method for a ZnO based semiconductor, and an apparatus for fabricating a ZnO based semiconductor, and the method includes introducing reactant gas mixing halogenated group II metallic gas including zinc and oxygen containing gas on one of a substrate and a semiconductor layer; and introducing hydride gas of group V as p type impurity material gas on one of the substrate and the semiconductor layer, wherein crystal growth of the zinc oxide based semiconductor layer doped with a p type impurity is performed on one of the substrate and the semiconductor layer, preventing mixing of the impurity which is not aimed and doping a p type impurity enough also at high temperature.
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