发明名称 |
WAFER PROCESSING METHOD FOR IMPROVING GETTERING CAPABILITIES OF WAFERS MADE THEREFROM |
摘要 |
A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed.
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申请公布号 |
US2010009520(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20090492260 |
申请日期 |
2009.06.26 |
申请人 |
AN JEONG HOON;MOON BYEONG SAM |
发明人 |
AN JEONG HOON;MOON BYEONG SAM |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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