发明名称 |
METHOD OF FORMING DIELECTRIC LAYER ABOVE FLOATING GATE FOR REDUCING LEAKAGE CURRENT |
摘要 |
A method of fabricating a memory system is disclosed that includes a set of non-volatile storage elements. The method includes forming a floating gate having a top and at least two sides. A dielectric cap is formed at the top of the floating gate. An inter-gate dielectric layer is formed around the at least two sides of the floating gate and over the top of the dielectric cap. A control gate is formed over the top of the floating gate, the inter-gate dielectric layer separates the control gate from the floating gate. In one aspect, forming the dielectric cap includes implanting oxygen in the top of the floating gate and heating the floating gate to form the dielectric cap from the implanted oxygen and silicon from which the floating gate was formed.
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申请公布号 |
US2010009503(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20080170321 |
申请日期 |
2008.07.09 |
申请人 |
KAI JAMES K;LEE DANA;ORIMOTO TAKASHI WHITNEY;PURAYATH VINOD R;MATAMIS GEORGE;CHIN HENRY |
发明人 |
KAI JAMES K.;LEE DANA;ORIMOTO TAKASHI WHITNEY;PURAYATH VINOD R.;MATAMIS GEORGE;CHIN HENRY |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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