| 摘要 |
A temperature sensor includes a temperature sensing unit for producing a sensing level by sensing an internal temperature in a semiconductor memory device, a reference level generating unit for setting up a reference level by selecting one of a plurality of reference voltages, which are set up according to the internal temperature of the semiconductor memory device, in response to a test mode signal and a temperature detecting signal, wherein the reference level generating unit includes fuse, and a comparison unit for comparing the sensing level to the reference level and producing the temperature detecting signal.
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