SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes: a semiconductor substrate including a trench; a capacitor electrode formed in the trench; a first insulation film formed on a bottom of the trench and between the semiconductor substrate and the capacitor electrode; a second insulation film formed on a side wall of the trench and between the semiconductor substrate and the capacitor electrode; and a first metal oxide film formed at the bottom of the trench and between the capacitor electrode and the first insulation film.