METHOD OF RESIST TREATMENT

摘要

A method of resist treatment is provided in which an ultrafine pattern having satisfactory precision is formed from a resist composition for the first resist pattern formation in a multi-patterning method such as a double patterning method.  The method of resist treatment comprises the steps of: applying a first resist composition comprising a resin (A) which has a group unstable to acids, is insoluble or sparingly soluble in aqueous alkali solutions, and becomes soluble by the action with an acid, a photo-acid generator (B), and a crosslinking agent (C) to a substrate and drying the composition to obtain a first resist film; prebaking the film; exposing the whole surface of the prebaked film to light; thereafter exposing the film to light through a mask; subjecting the film to post-exposure bake; developing the baked film to obtain a first resist pattern; subjecting the pattern to hard bake; applying a second resist composition to the hard-baked pattern; drying the second composition to obtain a second resist film; and subjecting the second resist film to pre-bake, light exposure, post-exposure bake, and then development to obtain a second resist pattern.