| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device not easily producing fatigue failure by relaxing a thermal stress at a joining portion of an electrode lead. <P>SOLUTION: The semiconductor device has a substrate 11, a semiconductor element 4, an electrode lead 51, and a sealing resin portion. The substrate 11 has a main surface on which a circuit pattern 3 is formed. The semiconductor element 4 has first and second surfaces, and arranged on the substrate such that the first surface faces the main surface. The electrode lead 51 has one end joined to the circuit pattern 3 and the other end joined to the second surface by soldering. The other end has a plurality of portions divided from each other. The sealing resin portion seals the semiconductor element 4 and the electrode lead 51. <P>COPYRIGHT: (C)2010,JPO&INPIT |
