| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask having a reduced thickness of a phase shift film, satisfying requirements for pattern accuracy without collapse of an OPC pattern, achieving controllability of optical characteristics and pattern defect inspection, and to provide a phase shift mask blank as an original of the phase shift mask. <P>SOLUTION: The phase shift mask blank includes, on a transparent substrate: a phase shift film having a transmittance of 9 to 30% at a wavelength of ArF excimer laser light, comprising a metal, Si and N as the main structural elements and having optical characteristics of a phase difference from 150°to less than 180°; and a light-shielding film formed on the phase shift film. The phase shift film has a film thickness of not more than 80 nm, and has a refractive index (n) of not less than 2.3 and an extinction coefficient (k) of not less than 0.28 with respect to the wavelength of ArF excimer laser light. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
