发明名称 |
ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE |
摘要 |
An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group. |
申请公布号 |
US2010007025(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20070278224 |
申请日期 |
2007.01.31 |
申请人 |
JSR CORPORATION |
发明人 |
NAKAGAWA HISASHI;YAMANAKA TATSUYA;AKIYAMA MASAHIRO;KOKUBO TERUKAZU;NOBE YOUHEI |
分类号 |
H01L21/31;C08G77/04;H01L23/48 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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