| 摘要 |
<p>Provided is a resist processing apparatus which processes a resist film formed on a substrate. The resist processing apparatus is provided with: a processing container which can maintain inside thereof in a vacuum state; a placing table, which is arranged inside the processing container and permits the substrate having the resist film formed thereon to be placed on the placing table; a gas supply section which jets a mixed gas, which contains chemically inert first gas and second gas, at a predetermined flow quantity toward the placing table; and an air releasing section which can release air from the processing container to a vacuum degree where the mixed gas jetted at the predetermined flow quantity from the gas supply section can be a molecular beam in the processing container.</p> |
