LAMINATE, SUBSTRATE FOR MANUFACTURING SELF-SUPPORTING SUBSTRATE, SELF-SUPPORTING SUBSTRATE, AND MANUFACTURING METHODS THEREOF

摘要

<P>PROBLEM TO BE SOLVED: To provide a substrate for manufacturing a self-supporting substrate which is suitably usable as a base substrate to manufacture an Al-based group III nitride single-crystal self-supporting substrate and reduced in strain on crystal level and has cracking and curvature suppressed. Ž<P>SOLUTION: A laminate includes: the base substrate made of single crystal of an inorganic substance which is not decomposed in an inert gas at 1,000°C, and decomposed by coming into contact with a reducing gas at 1,000-1,600°C to produce a nonvolatile substance; an Al-based group III nitride thin-film layer formed on the base substrate and made of a single-crystal Al-based group III nitride, or a mixture of single-crystal Al-based group III nitride and amorphous Al-based group III nitride, and having a thickness of 3 to 200 nm; and a group III nitride non-single-crystal layer formed on the Al-based group III nitride thin-film layer and having a thickness ≥100 times as thick as the thickness of the Al-based group III nitride thin-film layer, a plurality of gaps being provided on the interface between the base substrate and the Al-based group III nitride thin-film layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž