| 摘要 |
A block management method for managing a multi level cell (MLC) NAND flash memory is provided, wherein the MLC NAND flash memory has a plurality of physical blocks grouped into at least a data area and a spare area, each of the physical blocks has a plurality of pages divided into a plurality of upper pages, and a plurality of lower pages with a writing speed thereof being greater than that of the upper pages. The block management method includes configuring a plurality of logical blocks for being accessed by a host, recording the logical block belonged to a frequently accessed block and executing a special mode to use the lower pages of at least two physical blocks of the MLC NAND flash memory for storing data of one logical block belonged to the frequently accessed block. Accordingly, it is possible to increase the access speed of a storage system. |
