LOW-VOLTAGE THIN-FILM FIELD-EFFECT TRANSISTORS

摘要

A method of forming a low- voltage thin-film field-effect transistor comprising: forming a gate; forming a dielectric layer on the surface of the gate; forming a source region and a drain region; and forming a semiconductor layer adjacent the dielectric layer; wherein the dielectric layer is formed as a native oxide layer by oxidising the surface of the gate; and wherein the semiconductor layer is deposited by spray pyrolysis. The method may further comprise functionalising the dielectric layer with a self-assembling monolayer dielectric layer. The present disclosure also discloses forming the dielectric layer as a self-assembling monolayer, without first forming a native oxide (or other) dielectric layer.