| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solar cell which has high photoelectric conversion efficiency and is manufactured at low cost, and a method of manufacturing the same. <P>SOLUTION: The solar cell 31 has an n-type semiconductor layer 2 and a p-type semiconductor layer 3 between a substrate 1 and a translucent electrode 4; and the n-type semiconductor layer 2 is made of either of n-type GaN particulates and n-type InGaN-based particulates, and the p-type semiconductor layer 3 is made of either of p-type GaN particulates and p-type InGaN-based particulates, the particulates having an average particle diameter of 1 to 100 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
